1 power transistors 2sd1263, 2sD1263A silicon npn triple diffusion planar type for power amplification n features l high collector to base voltage v cbo l full-pack package which can be installed to the heat sink with one screw n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 350 400 250 300 5 1.5 0.75 35 2 150 C55 to +150 unit v v v a a w ?c ?c 2sd1263 2sD1263A 2sd1263 2sD1263A t c =25 c ta=25 c n electrical characteristics (t c =25?c) parameter collector cutoff current collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio base to emitter voltage collector to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i ces i ceo i ebo v ceo h fe1 * h fe2 v be v ce(sat) f t t on t stg t f conditions v ce = 350v, v be = 0 v ce = 400v, v be = 0 v ce = 150v, i b = 0 v ce = 200v, i b = 0 v eb = 5v, i c = 0 i c = 30ma, i b = 0 v ce = 10v, i c = 0.3a v ce = 10v, i c = 1a v ce = 10v, i c = 1a i c = 1a, i b = 0.2a v ce = 5v, i c = 0.5a, f = 10mhz i c = 1a, i b1 = 0.1a, i b2 = C 0.1a, v cc = 50v min 250 300 70 10 typ 30 0.5 2 0.5 max 1 1 1 1 1 250 1.5 1 unit ma ma ma v v v mhz m s m s m s 2sd1263 2sD1263A 2sd1263 2sD1263A 2sd1263 2sD1263A * h fe1 rank classification rank q p h fe1 70 to 150 120 to 250 unit: mm 1:base 2:collector 3:emitter toC220 full pack package(a) 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip 4.0 0.5 +0.2 ?.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.25 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 f 3.1 0.1
2 power transistors 2sd1263, 2sD1263A p c ta i c v ce i c v be v ce(sat) i c h fe i c f t i c area of safe operation (aso) r th(t) t 0 160 40 120 80 140 20 100 60 0 50 40 30 20 10 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) with a 50 50 2mm al heat sink (4) without heat sink (p c =2w) (1) (2) (3) (4) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 012 10 8 26 4 0 1.2 1.0 0.8 0.6 0.4 0.2 i b =14ma 12ma 10ma 2ma 4ma 6ma 8ma t c =25?c collector to emitter voltage v ce ( v ) collector current i c ( a ) 02.4 2.0 1.6 0.4 1.2 0.8 0 4.0 3.2 2.4 1.6 0.8 t c =100?c 25?c ?5?c v ce =10v base to emitter voltage v be ( v ) collector current i c ( a ) 0.01 3 1 0.1 0.03 0.3 0.01 0.03 0.1 0.3 1 3 10 i c /i b =10 t c =100?c 25?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =10v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe 0.001 0.01 0.1 1 0.003 0.03 0.3 0.1 0.3 1 3 10 30 100 300 1000 v ce =10v f=10mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) 1 10 100 1000 3 30 300 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 non repetitive pulse t c =25?c i cp i c t=1ms 10ms dc 2sd1263 2sD1263A collector to emitter voltage v ce ( v ) collector current i c ( a ) 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 10 ? 10 ? 1 10 10 3 10 2 (1) (2) (1) without heat sink (2) with a 100 100 2mm al heat sink time t ( s ) thermal resistance r th (t) ( ?c/w )
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